The disclosed technology generally relates to photovoltaic devices and more particularly to back contact photovoltaic devices, and to methods of fabricating back contact photovoltaic devices. In one aspect, a back contact photovoltaic cell includes an n-type silicon substrate having formed on a rear side first layer stacks formed at first locations and second layer stacks formed at second locations different from and non-overlapping with the first locations. Each of the first layer stacks includes a passivating tunneling layer and a first transparent conductive layer having a first work function, where the first transparent conductive layer induces an inversion region in the n-type silicon substrate at a corresponding one of the first locations, where the inversion region forms an emitter region of the back contact photovoltaic cell. Each of the second layer stacks induces an accumulation region in the n-type silicon substrate at a corresponding one of the second locations, where the accumulation region forms a back-surface field region of the back contact photovoltaic cell.