Invention Application
- Patent Title: INHERENTLY SELECTIVE PRECURSORS FOR DEPOSITION OF SECOND OR THIRD ROW TRANSITION METAL THIN FILMS
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Application No.: US15570989Application Date: 2015-06-18
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Publication No.: US20180222933A1Publication Date: 2018-08-09
- Inventor: Patricio E. ROMERO
- Applicant: Intel Corporation
- International Application: PCT/US2015/036522 WO 20150618
- Main IPC: C07F15/00
- IPC: C07F15/00 ; C07F1/02 ; C07F11/00 ; C23C16/18 ; C23C16/04 ; H01L21/768 ; H01L21/285
Abstract:
Inherently selective precursors for deposition of second or third row transition metal (e.g., tungsten or ruthenium) thin films are described. In an example, a ligand framework for second or third row transition metal complex formation includes a lithium complex.
Public/Granted literature
- US10464959B2 Inherently selective precursors for deposition of second or third row transition metal thin films Public/Granted day:2019-11-05
Information query
