- 专利标题: METHOD OF DETECTING SIZE OF PATTERN FORMED BY PHOTOLITHOGRAPHY
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申请号: US14893532申请日: 2015-08-18
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公开(公告)号: US20180239262A1公开(公告)日: 2018-08-23
- 发明人: Kuanju FU , Caiqin CHEN , Zhonglai WANG
- 申请人: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. , WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 优先权: CN201510481969.X 20150803
- 国际申请: PCT/CN2015/087349 WO 20150818
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G01B21/08 ; G02F1/1362
摘要:
The present invention provides a method for detecting a size of a pattern made by photolithography, which being applied for detecting a size of a pattern formed on an array substrate of a liquid crystal display and made by, which comprises: deriving function layer parameters and position parameters of a detection-pattern; deriving a thickness-profile of the detection-pattern according to the function layer parameters and the position parameters of the detection-pattern; deriving a plane-profile of the detection-pattern according to the thickness-profile of the detection-pattern; proceeile of the detection-pattern.
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