Invention Application
- Patent Title: METHODS OF FORMING DOPED SOURCE/DRAIN CONTACTS AND STRUCTURES FORMED THEREBY
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Application No.: US15779485Application Date: 2015-12-24
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Publication No.: US20180261696A1Publication Date: 2018-09-13
- Inventor: Glenn Glass , Karthik Jambunathan , Anand Murthy , Chandra Mohapatra , Seiyon Kim
- Applicant: INTEL CORPORATION
- International Application: PCT/US2015/000352 WO 20151224
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/165 ; H01L29/66
Abstract:
Methods of forming germanium channel structure are described. An embodiment includes forming a germanium fin on a substrate, wherein a portion of the germanium fin comprises a germanium channel region, forming a gate material on the germanium channel region, and forming a graded source/drain structure adjacent the germanium channel region. The graded source/drain structure comprises a germanium concentration that is higher adjacent the germanium channel region than at a source/drain contact region.
Public/Granted literature
- US10573750B2 Methods of forming doped source/drain contacts and structures formed thereby Public/Granted day:2020-02-25
Information query
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