公开(公告)号：US20180261696A1

公开(公告)日：2018-09-13

申请号：US15779485

申请日：2015-12-24

Applicant: INTEL CORPORATION

Inventor： Glenn Glass ,  Karthik Jambunathan ,  Anand Murthy ,  Chandra Mohapatra ,  Seiyon Kim

IPC: H01L29/78 ,  H01L29/165 ,  H01L29/66

Abstract: Methods of forming germanium channel structure are described. An embodiment includes forming a germanium fin on a substrate, wherein a portion of the germanium fin comprises a germanium channel region, forming a gate material on the germanium channel region, and forming a graded source/drain structure adjacent the germanium channel region. The graded source/drain structure comprises a germanium concentration that is higher adjacent the germanium channel region than at a source/drain contact region.

公开(公告)号：US11411110B2

公开(公告)日：2022-08-09

申请号：US17499605

申请日：2021-10-12

Applicant: Intel Corporation

Inventor： Michael Jackson ,  Anand Murthy ,  Glenn Glass ,  Saurabh Morarka ,  Chandra Mohapatra

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/32 ,  H01L29/165

Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.

公开(公告)号：US20220238714A1

公开(公告)日：2022-07-28

申请号：US17723582

申请日：2022-04-19

Applicant: Intel Corporation

Inventor： Michael Jackson ,  Anand Murthy ,  Glenn Glass ,  Saurabh Morarka ,  Chandra Mohapatra

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/32

Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.

公开(公告)号：US10396201B2

公开(公告)日：2019-08-27

申请号：US14912594

申请日：2013-09-26

Applicant: Intel Corporation

Inventor： Michael Jackson ,  Anand Murthy ,  Glenn Glass ,  Saurabh Morarka ,  Chandra Mohapatra

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/32 ,  H01L29/66 ,  H01L29/78 ,  H01L29/165

Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.

公开(公告)号：US11004978B2

公开(公告)日：2021-05-11

申请号：US16785431

申请日：2020-02-07

Applicant: Intel Corporation

Inventor： Glenn Glass ,  Karthik Jambunathan ,  Anand Murthy ,  Chandra Mohapatra ,  Seiyon Kim

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/165

Abstract: Methods of forming germanium channel structure are described. An embodiment includes forming a germanium fin on a substrate, wherein a portion of the germanium fin comprises a germanium channel region, forming a gate material on the germanium channel region, and forming a graded source/drain structure adjacent the germanium channel region. The graded source/drain structure comprises a germanium concentration that is higher adjacent the germanium channel region than at a source/drain contact region.

公开(公告)号：US20200176601A1

公开(公告)日：2020-06-04

申请号：US16785431

申请日：2020-02-07

Applicant: Intel Corporation

Inventor： Glenn Glass ,  Karthik Jambunathan ,  Anand Murthy ,  Chandra Mohapatra ,  Seiyon Kim

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/165

Abstract: Methods of forming germanium channel structure are described. An embodiment includes forming a germanium fin on a substrate, wherein a portion of the germanium fin comprises a germanium channel region, forming a gate material on the germanium channel region, and forming a graded source/drain structure adjacent the germanium channel region. The graded source/drain structure comprises a germanium concentration that is higher adjacent the germanium channel region than at a source/drain contact region.

公开(公告)号：US20220059699A1

公开(公告)日：2022-02-24

申请号：US17499605

申请日：2021-10-12

Applicant: Intel Corporation

Inventor： Michael Jackson ,  Anand Murthy ,  Glenn Glass ,  Saurabh Morarka ,  Chandra Mohapatra

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/32

Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.

公开(公告)号：US11107920B2

公开(公告)日：2021-08-31

申请号：US16509421

申请日：2019-07-11

Applicant: Intel Corporation

Inventor： Michael Jackson ,  Anand Murthy ,  Glenn Glass ,  Saurabh Morarka ,  Chandra Mohapatra

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/32 ,  H01L29/165

Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.

公开(公告)号：US10573750B2

公开(公告)日：2020-02-25

申请号：US15779485

申请日：2015-12-24

Applicant: Intel Corporation

Inventor： Glenn Glass ,  Karthik Jambunathan ,  Anand Murthy ,  Chandra Mohapatra ,  Seiyon Kim

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/165

Abstract: Methods of forming germanium channel structure are described. An embodiment includes forming a germanium fin on a substrate, wherein a portion of the germanium fin comprises a germanium channel region, forming a gate material on the germanium channel region, and forming a graded source/drain structure adjacent the germanium channel region. The graded source/drain structure comprises a germanium concentration that is higher adjacent the germanium channel region than at a source/drain contact region.