Invention Application
- Patent Title: POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION IN HETEROEPITAXIAL FILMS
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Application No.: US15467265Application Date: 2017-03-23
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Publication No.: US20180277367A1Publication Date: 2018-09-27
- Inventor: Stephen W. Bedell , Cheng-Wei Cheng , Kunal Mukherjee , John A. Ott , Devendra K. Sadana , Brent A. Wacaser
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/04 ; H01L21/306 ; H01L21/3065
Abstract:
A method for reducing crystalline defects in a semiconductor structure is presented. The method includes epitaxially growing a first crystalline material over a crystalline substrate, epitaxially growing a second crystalline material over the first crystalline material, and patterning and removing portions of the second crystalline material to form openings. The method further includes converting the first crystalline material into a non-crystalline material, depositing a thermally stable material in the openings, depositing a capping layer over the second crystalline material and the thermally stable material to form a substantially enclosed semiconductor structure, and annealing the substantially enclosed semiconductor structure.
Public/Granted literature
- US10453683B2 Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films Public/Granted day:2019-10-22
Information query
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