Invention Application
- Patent Title: METHOD OF FORMING A LAYER AND A METHOD OF FABRICATING A VARIABLE RESISTANCE MEMORY DEVICE USING THE SAME
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Application No.: US15927481Application Date: 2018-03-21
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Publication No.: US20180277758A1Publication Date: 2018-09-27
- Inventor: Jeonghee Park , Kyoung Sun Kim
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2017-0036231 20170322
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; C23C16/34 ; C23C16/455
Abstract:
A method of forming a target layer in semiconductor fabrication is disclosed that includes steps of forming a first layer by performing a first process at least one time and forming a second layer by performing a second process at least one time, wherein the first process may include supplying a first source gas, supplying a second source gas several times, and supplying an inert gas several times.
Public/Granted literature
- US10476000B2 Method of forming a layer and a method of fabricating a variable resistance memory device using the same Public/Granted day:2019-11-12
Information query
IPC分类:
