公开(公告)号：US09689603B2

公开(公告)日：2017-06-27

申请号：US14672934

申请日：2015-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  NDIS Corporation

Inventor： Hee Yuel Roh ,  Soon-Bum Kwon ,  Kyoung Sun Kim ,  Joo Ho Kim ,  Otsuka Tatsuhiro ,  Burm-Young Lee

IPC: F25D23/02 ,  F25D29/00 ,  G06F3/0488 ,  G09G3/34 ,  G09G3/36 ,  G02F1/1333 ,  G02F1/137

CPC classification number: F25D23/028 ,  F25D23/02 ,  F25D29/00 ,  F25D2400/361 ,  F25D2700/12 ,  G02F1/133377 ,  G02F1/13718 ,  G06F3/04883 ,  G09G3/3406 ,  G09G3/3433 ,  G09G3/36 ,  G09G2300/0486

Abstract: A refrigerator includes a body including a storage chamber; a door that is coupled to the body so as to open/close the storage chamber; a display that is disposed in at least one region of the door and is configured to be converted between a transparent mode and a display mode; and a controller that controls the display to display at least one among a text, an image, and color when the display is in the display mode.

公开(公告)号：US11600776B2

公开(公告)日：2023-03-07

申请号：US17033460

申请日：2020-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Jung ,  Kyoung Sun Kim ,  Jeonghee Park ,  Jiho Park ,  Changyup Park

IPC: H01L45/00 ,  H01J37/32 ,  H01J37/34 ,  H01L27/24

Abstract: An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.

公开(公告)号：US10818839B2

公开(公告)日：2020-10-27

申请号：US16149507

申请日：2018-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Jung ,  Kyoung Sun Kim ,  Jeonghee Park ,  Jiho Park ,  Changyup Park

IPC: H01L45/00 ,  H01J37/32 ,  H01J37/34 ,  H01L27/24

Abstract: An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.

公开(公告)号：US10476000B2

公开(公告)日：2019-11-12

申请号：US15927481

申请日：2018-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonghee Park ,  Kyoung Sun Kim

IPC: C23C16/34 ,  H01L45/00 ,  H01L27/24 ,  C23C16/455 ,  G11C13/00

Abstract: A method of forming a target layer in semiconductor fabrication is disclosed that includes steps of forming a first layer by performing a first process at least one time and forming a second layer by performing a second process at least one time, wherein the first process may include supplying a first source gas, supplying a second source gas several times, and supplying an inert gas several times.

公开(公告)号：US20180277758A1

公开(公告)日：2018-09-27

申请号：US15927481

申请日：2018-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonghee Park ,  Kyoung Sun Kim

IPC: H01L45/00 ,  H01L27/24 ,  C23C16/34 ,  C23C16/455

Abstract: A method of forming a target layer in semiconductor fabrication is disclosed that includes steps of forming a first layer by performing a first process at least one time and forming a second layer by performing a second process at least one time, wherein the first process may include supplying a first source gas, supplying a second source gas several times, and supplying an inert gas several times.