- 专利标题： MEMORY CELL, NONVOLATILE SEMICONDUCTOR STORAGE DEVICE, AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
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申请号： US15578413申请日： 2016-12-07
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公开(公告)号： US20180286875A1公开(公告)日： 2018-10-04
- 发明人: Daisuke OKADA , Kazumasa YANAGISAWA , Fukuo OWADA , Shoji YOSHIDA , Yasuhiko KAWASHIMA , Shinji YOSHIDA , Yasuhiro TANIGUCHI , Kosuke OKUYAMA
- 申请人： Floadia Corporation
- 申请人地址： JP Kodaira-shi, Tokyo
- 专利权人： Floadia Corporation
- 当前专利权人： Floadia Corporation
- 当前专利权人地址： JP Kodaira-shi, Tokyo
- 优先权： JP2015-247812 20151218; JP2016-164002 20160824
- 国际申请： PCT/JP2016/086355 WO 20161207
- 主分类号： H01L27/11521
- IPC分类号： H01L27/11521 ; H01L29/78 ; H01L29/788 ; H01L29/792 ; H01L27/11568 ; H01L29/66
摘要：
When a memory cell (MC) is downsized by reducing the distance between a drain region (12a) and a source region (12b) on the surface of a fin (S2) with a high impurity concentration inside the fin (S2), the shape of the fin (S2) can be set such that a potential difference between a memory gate electrode (MG) and the fin (S2) is reduced to suppress the occurrence of disturbance. Accordingly, the memory cell (MC) achieves downsizing and suppression of the occurrence of disturbance.
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