Invention Application
- Patent Title: MIDDLE-OF-LINE LOCAL INTERCONNECT STRUCTURES WITH HYBRID FEATURES
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Application No.: US15494762Application Date: 2017-04-24
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Publication No.: US20180308752A1Publication Date: 2018-10-25
- Inventor: Xunyuan Zhang , Frank W. Mont , Sean X. Lin , Mark V. Raymond
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532 ; H01L23/535 ; H01L23/528

Abstract:
Interconnect structures and methods of forming interconnect structures. An opening is formed that penetrates from a top surface of a dielectric layer into the dielectric layer. A first conductor layer is conformally deposited with a uniform thickness on the dielectric layer surrounding the first opening. A second conductor layer is formed in a space inside the first opening that is interior of the first conductor layer. The first conductor layer and the second conductor layer collectively define a hybrid feature that is embedded in the dielectric layer.
Information query
IPC分类: