发明申请
- 专利标题： METHOD OF MAKING LOW RESISTIVITY TUNGSTEN SPUTTER TARGETS AND TARGETS MADE THEREBY
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申请号： US15770302申请日： 2016-10-17
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公开(公告)号： US20180312960A1公开(公告)日： 2018-11-01
- 发明人: Eugene Y. Ivanov , Eduardo del Rio
- 申请人： Tosoh SMD, Inc.
- 国际申请： PCT/US2016/057311 WO 20161017
- 主分类号： C23C14/34
- IPC分类号： C23C14/34 ; B22F3/16 ; H01J37/34 ; C23C14/14
摘要：
Tungsten sputter targets have a purity of greater than four nines, a density of about 97% and higher, and an oxygen content of 10 ppm or less. Method of making such targets from powder precursors are disclosed wherein the tungsten powder is pressure consolidated such as by CIPing following by a sintering step under a hydrogen atmosphere to control oxygen and carbon content of the target.
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