An RC-IGBT having a transistor portion and diode portion is provided. An RC-IGBT having a transistor portion and diode portion, and including: a semiconductor substrate; drift region of the first conductivity type provided on the upper surface side of the semiconductor substrate; base region of the second conductivity type provided above the drift region; source region of the first conductivity type provided above the base region; and two or more trench portions provided passing through the source region and the base region from the upper end side of the source region is provided. The diode portion includes: a source region; contact trench provided between two adjacent trench portions of the two or more trench portions on the upper surface side of the semiconductor substrate; and contact layer of the second conductivity type provided below the contact trench, whose doping concentration is higher than a doping concentration of the base region.