Invention Application
- Patent Title: FET DRIVING CIRCUIT
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Application No.: US16017121Application Date: 2018-06-25
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Publication No.: US20180375504A1Publication Date: 2018-12-27
- Inventor: Min LIN , Ken MATSUURA
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2017-124338 20170626
- Main IPC: H03K17/0416
- IPC: H03K17/0416 ; H03K17/0412 ; H02M1/38 ; H03B5/12

Abstract:
A FET driving circuit includes: inputs into which a DC voltage is inputted; outputs connected to gate and source electrodes of a FET; a switch; a capacitance connected across the switch; and an LC resonance circuit connected in series with the switch across the inputs. A voltage generated across the switch during switching is outputted to drive the FET. The LC resonance circuit has a first connector connected to one input and a second connector connected to the switch, and is configured with a path including an inductance and a path including an inductance and a capacitance. An impedance between the first and second connectors has two resonant frequencies. The impedance has a local maximum at the lower resonant frequency, which is higher than a switching frequency, and a local minimum at the higher resonant frequency, which is around double the switching frequency.
Information query
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