- 专利标题: CIRCUIT FOR CMOS BASED RESISTIVE PROCESSING UNIT
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申请号: US15639255申请日: 2017-06-30
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公开(公告)号: US20190005381A1公开(公告)日: 2019-01-03
- 发明人: Yulong Li , Paul Solomon , Effendi Leobandung , Chun-Chen Yeh , Seyoung Kim
- 申请人: International Business Machines Corporation
- 主分类号: G06N3/063
- IPC分类号: G06N3/063 ; G06N3/08 ; G06F17/16
摘要:
A CMOS-based resistive processing unit (RPU) for a neural network. The RPU includes a capacitor device configured to store a charge representing a weight value associated with a neural network circuit operation. A current source Field Effect Transistor (FET) device is operatively connected to the capacitor device for increasing a charge on the capacitor. A current sink FET device operatively connected to the capacitor device is configured for decreasing the stored capacitor charge. An analog weight update circuit receives one or more update signals generated in conjunction with the neural network circuit operation, the analog weight update circuit controlling the current source FET device and the current sink FET device to provide either a determined amount of current to increase the stored charge on the capacitor device, or sink a determined amount of current to decrease the stored charge on the capacitor device.
公开/授权文献
- US11055610B2 Circuit for CMOS based resistive processing unit 公开/授权日:2021-07-06
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