After programming a set of resistive memory cells in a resistive memory device, the programmed states and the functionality of each resistive memory cell in the programmed set can be verified by a primary determination method and a secondary determination method. The primary determination method employs the step of determining whether a measured electrical current at a preset read voltage for the selected resistive memory cell is within electrical current specification for the selected resistive state. If the selected cell fails the primary determination method, the second determination method is performed, which includes determining whether a measured threshold voltage for the selected resistive memory cell is within threshold voltage specification for the selected resistive state. If the selected cell fails both methods, the selected cell is identified as a non-functional resistive memory cell. Otherwise, the selected cell is identified as an operational cell.