Invention Application
- Patent Title: SELF-REFERENCE SENSING FOR MEMORY CELLS
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Application No.: US15641783Application Date: 2017-07-05
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Publication No.: US20190013058A1Publication Date: 2019-01-10
- Inventor: Riccardo Muzzetto
- Applicant: Micron Technology, Inc.
- Main IPC: G11C11/22
- IPC: G11C11/22 ; G06F13/40

Abstract:
Methods, systems, and apparatuses for self-referencing sensing schemes are described. A cell having two transistors, or other switching components, and one capacitor, such as a ferroelectric capacitor, may be sensed using a reference value that is specific to the cell. The cell may be read and sampled via one access line, and the cell may be used to generate a reference voltage and sampled via another access line. For instance, a first access line of a cell may be connected to one read voltage while a second access line of the cell is isolated from a voltage source; then the second access line may be connected to another read voltage while the first access line is isolate from a voltage source. The resulting voltages on the respective access lines may be compared to each other and a logic value of the cell determined from the comparison.
Public/Granted literature
- US10304514B2 Self-reference sensing for memory cells Public/Granted day:2019-05-28
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