- 专利标题： SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF THE SEMICONDUCTOR DEVICE
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申请号： US16136988申请日： 2018-09-20
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公开(公告)号： US20190019771A1公开(公告)日： 2019-01-17
- 发明人: Takukazu OTSUKA
- 申请人： ROHM CO., LTD.
- 优先权： JP2016-083634 20160419
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L29/161 ; H01L29/41 ; H01L29/739 ; H01L29/78
摘要：
A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.
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