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    POWER SEMICONDUCTOR APPARATUS AND FABRICATION METHOD FOR THE SAME
    3.
    发明申请
    POWER SEMICONDUCTOR APPARATUS AND FABRICATION METHOD FOR THE SAME 有权

    公开(公告)号：US20220189904A1

    公开(公告)日：2022-06-16

    申请号：US17685057

    申请日：2022-03-02

    申请人： ROHM CO., LTD.

    发明人： Takukazu OTSUKA ,  Seita IWAHASHI ,  Maiko HATANO ,  Ryuta WATANABE ,  Katsuhiko YOSHIHARA

    IPC分类号： H01L23/00 ,  H01L23/495

    摘要： The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10−6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220013427A1

    公开(公告)日：2022-01-13

    申请号：US17293801

    申请日：2019-11-14

    申请人： ROHM CO., LTD.

    发明人： Takukazu OTSUKA

    IPC分类号： H01L23/36 ,  H01L23/532 ,  H01L23/31

    摘要： Semiconductor device (A10) includes conductive substrate (20) and semiconductor element (40). The conductive substrate (20) has obverse surface (20A) facing in thickness direction (z) and reverse surface (20B) facing opposite from the obverse surface (20A). The semiconductor element (40) is electrically bonded to the obverse surface (20A). The conductive substrate (20) includes first base layer (211), second base layer (212) and metal layer (22). The first base layer (211) and second base layer (212) are made of graphite composed of stacked graphenes. The metal layer (22) is between the first base layer (211) and the second base layer (212). The graphenes of the first base layer (211) are stacked in first stacking direction perpendicular to the thickness direction (z). The graphenes of the second base layer (212) are stacked in second stacking direction perpendicular to the thickness direction (z) and crossing the first stacking direction.

    SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF THE SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF THE SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190019771A1

    公开(公告)日：2019-01-17

    申请号：US16136988

    申请日：2018-09-20

    申请人： ROHM CO., LTD.

    发明人： Takukazu OTSUKA

    IPC分类号： H01L23/00 ,  H01L29/161 ,  H01L29/41 ,  H01L29/739 ,  H01L29/78

    摘要： A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

    SEMICONDUCTOR DEVICE
    8.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240055328A1

    公开(公告)日：2024-02-15

    申请号：US18496036

    申请日：2023-10-27

    申请人： ROHM CO., LTD.

    发明人： Atsushi YAMAGUCHI ,  Hiroyuki SAKAIRI ,  Takukazu OTSUKA

    IPC分类号： H01L23/495 ,  H01L25/16

    CPC分类号： H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49589 ,  H01L25/16 ,  H01L23/49513

    摘要： Semiconductor device A1 includes: first terminal 201A and second terminal 201B; first switching element 1A including first gate electrode 12A, first source electrode 13A and first drain electrode 14A; and second switching element 1B including second gate electrode 12B, second source electrode 13B and second drain electrode 14B. First switching element 1A and second switching element 1B are connected in series to each other between first terminal 201A and second terminal 201B. Semiconductor device A1 includes first capacitor 3A connected in parallel to first switching element 1A and second switching element 1B between first terminal 201A and second terminal 201B. First switching element 1A and second switching element 1B are aligned in y direction. First capacitor 3A overlaps with at least one of first switching element 1A and second switching element 1B as viewed in z direction. These arrangements serve to suppress surge voltage.

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230132511A1

    公开(公告)日：2023-05-04

    申请号：US17910460

    申请日：2021-03-15

    申请人： ROHM CO., LTD.

    发明人： Yuta OKAWAUCHI ,  Yasuo KANETAKE ,  Tatsuya MIYAZAKI ,  Takukazu OTSUKA

    IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/778 ,  H01L29/08

    摘要： A semiconductor device includes a first and a second switching element, a first and a second conductive member, and a capacitor. The first switching element has a first element obverse surface and a first element reverse surface facing away from each other in a first direction. The second switching element has a second element obverse surface and a second element reverse surface facing away from each other in the first direction. The first and second conductive members are spaced apart in a second direction orthogonal to the first direction. The capacitor has a first and a second connection terminal. The first and second switching elements are connected in series, forming a bridge. The first and second connection terminals are electrically connected to opposite ends of the bridge. The capacitor and the first switching element are on the first conductive member, the second switching element on the second conductive member.