Invention Application
- Patent Title: High Energy Broadband Laser System, Methods, and Applications
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Application No.: US16032808Application Date: 2018-07-11
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Publication No.: US20190020166A1Publication Date: 2019-01-17
- Inventor: Zenghu Chang , Xiaoming Ren , Yanchun Yin , Lam Mach
- Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.
- Applicant Address: US FL Orlando
- Assignee: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.
- Current Assignee: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.
- Current Assignee Address: US FL Orlando
- Main IPC: H01S3/00
- IPC: H01S3/00 ; H01S3/23

Abstract:
The present invention demonstrates a technique for achieving milli-joule level and higher energy, broad bandwidth laser pulses centered around 2.4 micrometer with a kilohertz and other repetition rate. The key to such technique is to start with a broadband micro-joule level seed laser at around 2.4 micrometer, which could be generated through difference frequency generation, four-wave mixing process and other methods. This micro-joule level seed laser could then be amplified to above one milli-joule through chirped pulse amplification in a Cr2+:ZnSe or Cr2+:ZnS crystal pumped by a commercially available Ho:YAG or other appropriate suitable lasers. Due to the high seed energy, fewer gain passes are needed to achieve a milli-joule level output thus significantly simplifies laser architectures. Furthermore, gain narrowing effect in a typical chirped pulse amplifier is also mitigated and thus enable a broadband output.
Public/Granted literature
- US10790631B2 High energy broadband laser system, methods, and applications Public/Granted day:2020-09-29
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