- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
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申请号： US15696201申请日： 2017-09-06
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公开(公告)号： US20190027603A1公开(公告)日： 2019-01-24
- 发明人: Chi-Hsuan Cheng , Cheng-Pu Chiu , Yu-Chih Su , Chih-Yi Wang , Chin-Yang Hsieh , Tien-Shan Hsu , Yao-Jhan Wang
- 申请人： UNITED MICROELECTRONICS CORP.
- 优先权： TW106124194 20170719
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L27/092 ; H01L29/06 ; H01L21/8238
摘要：
A semiconductor device and a method of forming the same, the semiconductor device includes a first and a second fin structures, a first, a second and a third isolation structures, and a first and a second gate structures. The first and second fin structures are disposed in a substrate. The first isolation structure is disposed in the substrate and surrounds the first and second fin structures. The second isolation structure is disposed in the first fin structure, and a top surface of the second isolation structure is leveled with a top surface of the first and second fin structures. The third isolation structure is disposed in the second fin shaped structure, and a top surface of the third isolation structure is lower than the top surface of the first and second fin structures. The first and second gate structures are disposed on the second and third isolation structures, respectively.
公开/授权文献
- US10217866B2 Semiconductor device and method of forming the same 公开/授权日：2019-02-26
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