- 专利标题： BURIED LOW-RESISTANCE METAL WORD LINES FOR CROSS-POINT VARIABLE-RESISTANCE MATERIAL MEMORIES
-
申请号： US16127984申请日： 2018-09-11
-
公开(公告)号： US20190027684A1公开(公告)日： 2019-01-24
- 发明人: Jun Liu , Michael P. Violette
- 申请人： Micron Technology, Inc.
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; G11C13/00 ; H01L27/24 ; H01L27/10
摘要：
Variable-resistance material memories include a buried salicide word line disposed below a diode. Variable-resistance material memories include a metal spacer spaced apart and next to the diode. Processes include the formation of one of the buried salicide word line and the metal spacer. Devices include the variable-resistance material memories and one of the buried salicided word line and the spacer word line.
公开/授权文献
信息查询
IPC分类:
