Invention Application
- Patent Title: BURIED LOW-RESISTANCE METAL WORD LINES FOR CROSS-POINT VARIABLE-RESISTANCE MATERIAL MEMORIES
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Application No.: US16128052Application Date: 2018-09-11
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Publication No.: US20190027685A1Publication Date: 2019-01-24
- Inventor: Jun Liu , Michael P. Violette
- Applicant: Micron Technology, Inc.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00 ; H01L27/24 ; H01L27/10
Abstract:
Variable-resistance material memories include a buried salicide word line disposed below a diode. Variable-resistance material memories include a metal spacer spaced apart and next to the diode. Processes include the formation of one of the buried salicide word line and the metal spacer. Devices include the variable-resistance material memories and one of the buried salicided word line and the spacer word line.
Information query
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