CRYSTALLINE SILICON SOLAR CELL, PRODUCTION METHOD THEREFOR, AND SOLAR CELL MODULE
摘要:
A crystalline silicon-based solar cell includes a crystalline silicon substrate having a first principal surface, a second principal surface, and a lateral surface. On the first principal surface is arranged, in the following order, a first intrinsic silicon-based thin-film, a first conductive silicon-based thin-film, a light-receiving-side transparent electrode layer and a light-receiving-side metal electrode. On the second principal surface is arranged, in the following order, a second intrinsic silicon-based thin-film, a second conductive silicon-based thin-film, a back-side transparent electrode layer and a back-side metal electrode. The second conductive silicon-based thin-film has a conductivity-type different from that of the first conductive silicon-based thin-film. Both the first principal surface and the second principal surface are textured. Both the light-receiving-side metal electrode and the back-side metal electrode have a pattern shape. The back-side transparent electrode layer is not provided on a peripheral edge of the second principal surface.
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L31/00 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件(H01L51/42优先;由形成在一共用衬底内或其上的多个固态组件,而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00)
H01L31/04 .用作光伏〔PV〕转换器件(制造中其测试入H01L21/66;制造之后其测试入H02S50/10)
H01L31/042 ..单个光伏电池的光伏模块或者阵列(用于光伏模块的支撑结构入H02S20/00)
H01L31/0445 ...包括薄膜太阳能电池,如单个薄膜a-Si、 CIS或者CdTe太阳能电池
H01L31/046 ....由多个沉积在同一衬底上的薄膜太阳能电池组成的光伏模块
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