- 专利标题: IN-MEMORY ANALOG NEURAL CACHE
-
申请号: US16160800申请日: 2018-10-15
-
公开(公告)号: US20190057304A1公开(公告)日: 2019-02-21
- 发明人: Amrita Mathuriya , Sasikanth Manipatruni , Victor Lee , Huseyin Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , IAN YOUNG , Abhishek Sharma
- 申请人: Amrita Mathuriya , Sasikanth Manipatruni , Victor Lee , Huseyin Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , IAN YOUNG , Abhishek Sharma
- 主分类号: G06N3/063
- IPC分类号: G06N3/063 ; G06N3/04
摘要:
The present disclosure is directed to systems and methods of implementing an analog neural network using a pipelined SRAM architecture (“PISA”) circuitry disposed in on-chip processor memory circuitry. The on-chip processor memory circuitry may include processor last level cache (LLC) circuitry. One or more physical parameters, such as a stored charge or voltage, may be used to permit the generation of an in-memory analog output using a SRAM array. The generation of an in-memory analog output using only word-line and bit-line capabilities beneficially increases the computational density of the PISA circuit without increasing power requirements. Thus, the systems and methods described herein beneficially leverage the existing capabilities of on-chip SRAM processor memory circuitry to perform a relatively large number of analog vector/tensor calculations associated with execution of a neural network, such as a recurrent neural network, without burdening the processor circuitry and without significant impact to the processor power requirements.
公开/授权文献
- US11502696B2 In-memory analog neural cache 公开/授权日:2022-11-15
信息查询