发明申请
- 专利标题: LEVEL SHIFT CIRCUIT
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申请号: US16123266申请日: 2018-09-06
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公开(公告)号: US20190081622A1公开(公告)日: 2019-03-14
- 发明人: Toshihiro YAGI
- 申请人: Toshiba Memory Corporation
- 申请人地址: JP Minato-ku
- 专利权人: Toshiba Memory Corporation
- 当前专利权人: Toshiba Memory Corporation
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2017-173477 20170908; JP2018-049762 20180316
- 主分类号: H03K17/0412
- IPC分类号: H03K17/0412 ; H03K19/0185 ; H03K19/017 ; H03K3/356
摘要:
According to one embodiment, in a level shift circuit, a first PMOS transistor is electrically connected at a gate to a first node to which a first signal having an amplitude to be a first power-supply potential is input, is electrically connected to a second node at a source, and is electrically connected at a drain to an output terminal from which a signal having an amplitude to be a second power-supply potential is output. The first NMOS transistor is electrically connected to the first node at a gate and is electrically connected to the output terminal at a drain. The second PMOS transistor is electrically connected to a node to be the second power-supply potential at a source, and is electrically connected to the second node at a drain. The potential adjusting circuit is electrically connected to at least the second node.
公开/授权文献
- US10560084B2 Level shift circuit 公开/授权日:2020-02-11
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