Invention Application
- Patent Title: Selective Film Forming Method and Method of Manufacturing Semiconductor Device
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Application No.: US16144311Application Date: 2018-09-27
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Publication No.: US20190096750A1Publication Date: 2019-03-28
- Inventor: Yumiko KAWANO , Shuji AZUMO , Hiroki MURAKAMI , Michitaka AITA , Tadahiro ISHIZAKA , Koji AKIYAMA , Yusaku KASHIWAGI , Hajime NAKABAYASHI
- Applicant: TOKYO ELECTRON LIMITED
- Priority: JP2017-187575 20170928
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.
Information query
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