- 专利标题： Semiconductor on Insulator Devices Containing Permanent Charge
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申请号： US16042855申请日： 2018-07-23
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公开(公告)号： US20190123210A1公开(公告)日： 2019-04-25
- 发明人: Amit Paul , Mohamed N. Darwish
- 申请人： MaxPower Semiconductor Inc.
- 申请人地址： US CA San Jose
- 专利权人： MaxPower Semiconductor Inc.
- 当前专利权人： MaxPower Semiconductor Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/06 ; H01L29/40 ; H01L29/78
摘要：
A lateral SOI device may include a semiconductor channel region connected to a drain region by a drift region. An insulation region on the drift layer is positioned between the channel region and the drain region. Permanent charges may be embedded in the insulation region sufficient to cause inversion in the insulation region. The semiconductor layer also overlies a global insulation layer, and permanent charges are preferably embedded in at least selected areas of this insulation layer too.
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