Invention Application
- Patent Title: TRANSITION METAL COMPOUND, PREPARATION METHOD THEREFOR, AND COMPOSITION FOR DEPOSITING TRANSITION METAL-CONTAINING THIN FILM, CONTAINING SAME
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Application No.: US16093012Application Date: 2017-04-06
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Publication No.: US20190135840A1Publication Date: 2019-05-09
- Inventor: Myong Woon KIM , Sang Ick LEE , Won Mook CHAE , Sang Jun YIM , Kang Yong LEE , A Ra CHO , Sang Yong JEON , Haeng Don LIM
- Applicant: DNF CO., LTD.
- Applicant Address: KR Daejeon
- Assignee: DNF Co., Ltd.
- Current Assignee: DNF Co., Ltd.
- Current Assignee Address: KR Daejeon
- Priority: KR10-2016-0044683 20160412; KR10-2017-0040141 20170329
- International Application: PCT/KR2017/003782 WO 20170406
- Main IPC: C07F7/10
- IPC: C07F7/10 ; C23C16/455 ; C23C16/30

Abstract:
The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.
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