公开(公告)号：US20220181578A1

公开(公告)日：2022-06-09

申请号：US17435350

申请日：2020-03-06

申请人： DNF CO., LTD

发明人： Myoung Woon KIM ,  Sang Ick LEE ,  Se Jin JANG ,  Sung Gi KIM ,  Jeong Joo PARK ,  Won Mook CHAE ,  A Ra CHO ,  Byeong il YANG ,  Joong Jin PARK ,  Gun Joo PARK ,  Sam Dong LEE ,  Haeng don LIM ,  Sang Yong JEON

IPC分类号： H01L51/52 ,  C23C16/455 ,  C23C16/40 ,  H01L51/56 ,  C23C16/56

摘要： The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.

公开(公告)号：US20220275010A1

公开(公告)日：2022-09-01

申请号：US17753170

申请日：2020-08-13

申请人： DNF CO., LTD.

发明人： Se Jin JANG ,  Sung Gi KIM ,  Jeong Joo PARK ,  Tae Seok BYUN ,  Yong Hee KWONE ,  Yeong Hun KIM ,  Haengdon LIM ,  Sang Yong JEON ,  Sang Ick LEE

IPC分类号： C07F7/21 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

摘要： Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present invention has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.

公开(公告)号：US20220018017A1

公开(公告)日：2022-01-20

申请号：US17294377

申请日：2019-11-13

申请人： DNF CO., LTD.

发明人： Myong Woon KIM ,  Sang Ick LEE ,  Jang Woo SEO ,  Sang Yong JEON ,  Haeng Don LIM

IPC分类号： C23C16/18 ,  C07F17/00 ,  C23C16/455 ,  C23C16/56

摘要： The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.

公开(公告)号：US20230250114A1

公开(公告)日：2023-08-10

申请号：US18165870

申请日：2023-02-07

申请人： DNF CO., LTD.

发明人： Yong Hee KWONE ,  Young Jae IM ,  Sang Yong JEON ,  Tae Seok BYUN ,  Sang Chan LEE ,  Sang Ick LEE

IPC分类号： C07F7/22 ,  C01G19/02 ,  C01G30/00 ,  C07F9/90 ,  C23C16/40 ,  C23C16/455

CPC分类号： C07F7/2284 ,  C01G19/02 ,  C01G30/005 ,  C07F9/902 ,  C23C16/407 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/40

摘要： Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.

公开(公告)号：US20230203655A1

公开(公告)日：2023-06-29

申请号：US18146894

申请日：2022-12-27

申请人： DNF CO., LTD.

发明人： Yong Hee KWONE ,  Young Jae IM ,  Sang Yong JEON ,  Tae Seok BYUN ,  Sang Chan LEE ,  Sang Ick LEE

IPC分类号： C23C16/455 ,  C23C16/40

CPC分类号： C23C16/45553 ,  C23C16/45538 ,  C23C16/40

摘要： Provided are a composition for depositing an antimony-containing thin film including a novel antimony compound which may be useful as a precursor of an antimony-containing thin film and a method for manufacturing an antimony-containing thin film using the same.

公开(公告)号：US20190135840A1

公开(公告)日：2019-05-09

申请号：US16093012

申请日：2017-04-06

申请人： DNF CO., LTD.

发明人： Myong Woon KIM ,  Sang Ick LEE ,  Won Mook CHAE ,  Sang Jun YIM ,  Kang Yong LEE ,  A Ra CHO ,  Sang Yong JEON ,  Haeng Don LIM

IPC分类号： C07F7/10 ,  C23C16/455 ,  C23C16/30

摘要： The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.

公开(公告)号：US20170125243A1

公开(公告)日：2017-05-04

申请号：US15317920

申请日：2015-06-04

申请人： DNF CO.,LTD.

发明人： Se Jin JANG ,  Sang-Do LEE ,  Jong Hyun KIM ,  Sung Gi KIM ,  Sang Yong JEON ,  Byeong-il YANG ,  Jang Hyeon SEOK ,  Sang Ick LEE ,  Myong Woon KIM

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  C01B21/068 ,  C07F7/10

CPC分类号： H01L21/02219 ,  C01B21/068 ,  C07F7/10 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

摘要： Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si—N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si—N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).