- 专利标题: SEMICONDUCTOR PRODUCT AND FABRICATION PROCESS
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申请号: US16241143申请日: 2019-01-07
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公开(公告)号: US20190157142A1公开(公告)日: 2019-05-23
- 发明人: Hong YANG , Abbas ALI , Yaping CHEN , Chao ZUO , Seetharaman SRIDHAR , Yunlong LIU
- 申请人: Texas Instruments Incorporated
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/532 ; H01L21/285 ; H01L21/3213
摘要:
Disclosed examples provide processes for fabricating a semiconductor product and for forming a patterned stack with an aluminum layer and a tungsten layer, including forming a first dielectric layer on a gate structure and on first and second regions of a substrate, forming a diffusion barrier layer on the first dielectric layer, forming a tungsten layer on the diffusion barrier layer, forming an aluminum layer on the tungsten layer, forming a hard mask on the aluminum layer, forming a patterned resist mask which covers the hard mask above the first region and exposes the hard mask layer above the second region, dry etching the hard mask and the aluminum layer above the second region using the patterned resist mask layer, removing the resist mask, and dry etching the tungsten layer using the hard mask layer to expose the first dielectric layer above the second region.
公开/授权文献
- US10573553B2 Semiconductor product and fabrication process 公开/授权日:2020-02-25