- 专利标题: LAYER STRUCTURE INCLUDING DIFFUSION BARRIER LAYER AND METHOD OF MANUFACTURING THE SAME
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申请号: US16257171申请日: 2019-01-25
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公开(公告)号: US20190157211A1公开(公告)日: 2019-05-23
- 发明人: Hyunjae SONG , Seunggeol Nam , Yeonchoo Cho , Seongjun Park , Hyeonjin Shin , Jaeho Lee
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2015-0023540 20150216
- 主分类号: H01L23/532
- IPC分类号: H01L23/532 ; H01L21/768 ; H01L23/522
摘要:
Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.
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