- 专利标题： METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
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申请号： US15849599申请日： 2017-12-20
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公开(公告)号： US20190157443A1公开(公告)日： 2019-05-23
- 发明人: Chun-Hao Lin , Hsin-Yu Chen , Shou-Wei Hsieh
- 申请人： UNITED MICROELECTRONICS CORP.
- 优先权： CN201711183881.5 20171123
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/762 ; H01L21/02 ; H01L21/027
摘要：
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a first buffer layer on the first fin-shaped structure and the second fin-shaped structure; removing the first buffer layer on the first region; and performing a curing process so that a width of the first fin-shaped structure is different from a width of the second fin-shaped structure.
公开/授权文献
- US10483395B2 Method for fabricating semiconductor device 公开/授权日：2019-11-19
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