A method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, or O2, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A between 13 kV and 40 kV and setting the ion dosage at a value between 5.56×1014×A/kV+4.78×1016 ions/cm2 and −2.22×1016×A/kV+1.09×1018 ions/cm2, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.