A method of fabricating a magnetic memory device may include forming a magnetic tunnel junction layer on a substrate, sequentially forming a top electrode pattern and a mask pattern on the magnetic tunnel junction layer, patterning the magnetic tunnel junction layer using the mask pattern and the top electrode pattern as a first etch mask to form a magnetic tunnel junction pattern, forming a protection layer on side surfaces of the mask pattern, the top electrode pattern, and the magnetic tunnel junction pattern, the protection layer being extended to cover a first top surface of the mask pattern, removing a portion of the protection layer on the first top surface of the mask pattern to expose the first top surface of the mask pattern, and removing the mask pattern to expose a second top surface of the top electrode pattern.