- 专利标题： SEMICONDUCTOR DEVICE AND METHOD WITH MULTIPLE REDISTRIBUTION LAYER AND FINE LINE CAPABILITY
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申请号： US16278972申请日： 2019-02-19
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公开(公告)号： US20190189561A1公开(公告)日： 2019-06-20
- 发明人: Sukianto Rusli
- 申请人： Chip Solutions, LLC
- 主分类号： H01L23/538
- IPC分类号： H01L23/538 ; H01L23/532 ; H01L23/31 ; H01L23/528 ; H01L23/522 ; H01L21/56 ; H01L21/768 ; H01L21/3213 ; H01L23/00
摘要：
A semiconductor device includes a semiconductor die and a substrate having a first surface and a second surface. The semiconductor die is attached to the second surface. The substrate includes a layer of insulative material and an embedded conductive circuit in the layer of insulative material. The embedded conductive circuit includes an etched layer of a conductive material. The etched layer of the conductive material is located on the first surface of the substrate. The etched layer of the conductive material is made of a first metallic material and the embedded conductive circuit is made of a second metallic material that is different than the first metallic material.
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