公开(公告)号：US10586746B2

公开(公告)日：2020-03-10

申请号：US15705567

申请日：2017-09-15

申请人： CHIP SOLUTIONS, LLC

发明人： Sukianto Rusli

IPC分类号： H01L21/56 ,  H01L21/67 ,  H01L23/13 ,  H01L21/673 ,  H01L21/48 ,  H01L21/66 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065 ,  H01L23/522 ,  H01L21/683 ,  H01L23/00

摘要： Disclosed herein is a method for forming a semiconductor package. The method includes providing a first releasable chip carrier attached to a conductive layer. A circuit layer is formed on a surface of the conductive layer and a dielectric layer is applied over a surface of the circuit layer. A second releasable chip carrier is attached to a surface of the dielectric layer and the first releasable chip carrier is released from the conductive layer via facilitation of a first activating source. The circuitry of the circuit layer is operationally tested.

公开(公告)号：US10354907B2

公开(公告)日：2019-07-16

申请号：US15977266

申请日：2018-05-11

申请人： CHIP SOLUTIONS, LLC

发明人： Sukianto Rusli

IPC分类号： H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00

摘要： A method for making a semiconductor device includes providing a releasable carrier attached to a conductive layer, patterning a conductive circuit on a surface of the conductive layer, applying an insulative material at least partially covering the conductive circuit, releasing the releasable carrier from the conductive layer, and facilitating the releasing with an activating source. A method of fabricating a releasable carrier includes providing a supporting carrier, attaching a releasable tape to the supporting carrier, providing a first conductive layer and a second conductive layer attached to the first conductive layer, and attaching the first conductive layer to the releasable tape, where the releasable tape is configured to release the supporting carrier from the first conductive layer after being exposed to an activating source.

公开(公告)号：US10332775B2

公开(公告)日：2019-06-25

申请号：US15211481

申请日：2016-07-15

申请人： Chip Solutions, LLC

发明人： Sukianto Rusli

IPC分类号： H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00

摘要： Disclosed herein is a releasable carrier that includes a supporting carrier, a carrier conductive layer, and a releasable tape located between the supporting carrier and the carrier conductive layer. The releasable tape attaches the supporting carrier to the carrier conductive layer. The releasable tape is configured to release the supporting carrier from the carrier conductive layer after being exposed to an activating source. The releasable carrier further includes a thin conductive layer attached to the carrier conductive layer, the thin conductive layer creating a surface configured to receive a conductive circuit. Further disclosed is a method for fabricating the releasable carrier and a method for making a semiconductor device using the releasable carrier.

公开(公告)号：US20170018526A1

公开(公告)日：2017-01-19

申请号：US15211631

申请日：2016-07-15

申请人： Chip Solutions, LLC

发明人： Sukianto Rusli

IPC分类号： H01L23/00

CPC分类号： H01L21/6835 ,  H01L21/4846 ,  H01L21/486 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/08 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/82 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/0801 ,  H01L2224/08501 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/81455 ,  H01L2224/821 ,  H01L2224/82896 ,  H01L2924/15747

摘要： Disclosed herein is a semiconductor device that includes a semiconductor die and a substrate including a first surface and a second surface. The substrate includes a conductive circuit and an insulative material over the conductive circuit. The semiconductor die is attached to the second surface. The semiconductor device further includes an interconnect joint structure in the substrate creating a capture pad including a middle copper layer, an adjacent top nickel layer, and an adjacent bottom nickel layer. A method for making a semiconductor device is further disclosed.

摘要翻译： 本文公开了包括半导体管芯和包括第一表面和第二表面的衬底的半导体器件。 衬底包括导电电路和导电电路上的绝缘材料。 半导体管芯附接到第二表面。 半导体器件还包括在衬底中的互连接头结构，产生包括中间铜层，相邻顶部镍层和相邻底部镍层的捕获垫。 进一步公开了制造半导体器件的方法。

公开(公告)号：US20170018475A1

公开(公告)日：2017-01-19

申请号：US15211290

申请日：2016-07-15

申请人： Chip Solutions, LLC

发明人： Sukianto Rusli

IPC分类号： H01L23/31 ,  H01L23/498 ,  H01L21/683 ,  H01L23/00 ,  H01L21/56 ,  H01L21/48

CPC分类号： H01L21/6835 ,  H01L21/4846 ,  H01L21/486 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/08 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/82 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/0801 ,  H01L2224/08501 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/81455 ,  H01L2224/821 ,  H01L2224/82896 ,  H01L2924/15747

摘要： Disclosed herein is a semiconductor device that includes a semiconductor die and a substrate having a first surface and a second surface. The semiconductor die is attached to the second surface. The substrate includes a layer of insulative material and at least a portion of an embedded conductive circuit in the layer of insulative material. The substrate includes an etched layer of a conductive material attached to the portion of the conductive circuit, the etched layer of the conductive material located on the first surface of the substrate.

摘要翻译： 本文公开了包括半导体管芯和具有第一表面和第二表面的衬底的半导体器件。 半导体管芯附接到第二表面。 衬底包括绝缘材料层和绝缘材料层中的嵌入式导电电路的至少一部分。 衬底包括附着到导电电路的部分的导电材料的蚀刻层，位于衬底的第一表面上的导电材料的蚀刻层。

公开(公告)号：US20190304949A1

公开(公告)日：2019-10-03

申请号：US16370680

申请日：2019-03-29

申请人： CHIP SOLUTIONS, LLC

发明人： Sukianto Rusli

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L21/56

摘要： A method of semiconductor packaging includes providing a plurality of substrate units including at least one good known substrate unit on a first adhesive layer of a first carrier. The method includes applying a first activating source to the first adhesive layer in situ such that the first adhesive layer releases from the at least one good known substrate unit without physical contact by an outside source to the at least one good known substrate unit. The method includes transferring the at least one good known substrate unit onto a second adhesive layer of a second carrier, attaching at least one die to the at least one good known substrate unit, and applying a second activating source to the second adhesive layer such that the second adhesive layer releases from the at least one good known substrate unit.

公开(公告)号：US09812347B2

公开(公告)日：2017-11-07

申请号：US15211631

申请日：2016-07-15

申请人： Chip Solutions, LLC

发明人： Sukianto Rusli

IPC分类号： H01L23/00 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498

摘要： Disclosed herein is a semiconductor device that includes a semiconductor die and a substrate including a first surface and a second surface. The substrate includes a conductive circuit and an insulative material over the conductive circuit. The semiconductor die is attached to the second surface. The semiconductor device further includes an interconnect joint structure in the substrate creating a capture pad including a middle copper layer, an adjacent top nickel layer, and an adjacent bottom nickel layer. A method for making a semiconductor device is further disclosed.

公开(公告)号：US20180261489A1

公开(公告)日：2018-09-13

申请号：US15977266

申请日：2018-05-11

申请人： CHIP SOLUTIONS, LLC

发明人： Sukianto Rusli

IPC分类号： H01L21/683 ,  H01L23/498 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00

CPC分类号： H01L21/6835 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/82 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/0801 ,  H01L2224/08501 ,  H01L2224/13101 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/48091 ,  H01L2224/81001 ,  H01L2224/81011 ,  H01L2224/8121 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2224/821 ,  H01L2224/82896 ,  H01L2924/00014 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A method for making a semiconductor device includes providing a releasable carrier attached to a conductive layer, patterning a conductive circuit on a surface of the conductive layer, applying an insulative material at least partially covering the conductive circuit, releasing the releasable carrier from the conductive layer, and facilitating the releasing with an activating source. A method of fabricating a releasable carrier includes providing a supporting carrier, attaching a releasable tape to the supporting carrier, providing a first conductive layer and a second conductive layer attached to the first conductive layer, and attaching the first conductive layer to the releasable tape, where the releasable tape is configured to release the supporting carrier from the first conductive layer after being exposed to an activating source.

公开(公告)号：US09941146B2

公开(公告)日：2018-04-10

申请号：US15211290

申请日：2016-07-15

申请人： Chip Solutions, LLC

发明人： Sukianto Rusli

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683

CPC分类号： H01L21/6835 ,  H01L21/4846 ,  H01L21/486 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/08 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/82 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/0801 ,  H01L2224/08501 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/81455 ,  H01L2224/821 ,  H01L2224/82896 ,  H01L2924/15747

摘要： Disclosed herein is a semiconductor device that includes a semiconductor die and a substrate having a first surface and a second surface. The semiconductor die is attached to the second surface. The substrate includes a layer of insulative material and at least a portion of an embedded conductive circuit in the layer of insulative material. The substrate includes an etched layer of a conductive material attached to the portion of the conductive circuit, the etched layer of the conductive material located on the first surface of the substrate.

公开(公告)号：US09847244B2

公开(公告)日：2017-12-19

申请号：US15211631

申请日：2016-07-15

申请人： Chip Solutions, LLC

发明人： Sukianto Rusli

IPC分类号： H01L23/00 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L21/6835 ,  H01L21/4846 ,  H01L21/486 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/08 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/82 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/0801 ,  H01L2224/08501 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/81455 ,  H01L2224/821 ,  H01L2224/82896 ,  H01L2924/15747

摘要： Disclosed herein is a semiconductor device that includes a semiconductor die and a substrate including a first surface and a second surface. The substrate includes a conductive circuit and an insulative material over the conductive circuit. The semiconductor die is attached to the second surface. The semiconductor device further includes an interconnect joint structure in the substrate creating a capture pad including a middle copper layer, an adjacent top nickel layer, and an adjacent bottom nickel layer. A method for making a semiconductor device is further disclosed.