- 专利标题： METHODS AND APPARATUS TO REMOVE EPITAXIAL DEFECTS IN SEMICONDUCTORS
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申请号： US16327728申请日： 2016-09-30
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公开(公告)号： US20190189795A1公开(公告)日： 2019-06-20
- 发明人: Aaron D. Lilak , Rishabh Mehandru , Patrick Morrow , Patrick H. Keys
- 申请人： Intel Corporation
- 国际申请： PCT/US16/54846 WO 20160930
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/304 ; H01L21/762 ; H01L21/768 ; H01L21/78 ; H01L29/66
摘要：
Methods and apparatus to remove epitaxial defects in semiconductors are disclosed. A disclosed example multilayered die structure includes a fin having a first material, where the fin is epitaxially grown from a first substrate layer having a second material, and where a defect portion of the fin is etched or polished. The disclosed example multilayered die structure also includes a second substrate layer having an opening through which the fin extends.
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