发明申请
- 专利标题： SEMICONDUCTOR MEMORY DEVICE
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申请号： US16125167申请日： 2018-09-07
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公开(公告)号： US20190206877A1公开(公告)日： 2019-07-04
- 发明人: Dong-Wan KIM , Keunnam KIM , Juik LEE
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 优先权： KR10-2018-0000764 20180103
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L27/22 ; H01L27/24 ; H01L23/535 ; G11C8/08
摘要：
A semiconductor memory device includes a word line buried in an upper portion of a substrate and extending in a first direction, and a word line contact plug connected to the word line. An end portion of the word line includes a contact surface exposed in the first direction, and the word line contact plug is connected to the contact surface.
公开/授权文献
- US10600791B2 Semiconductor memory device 公开/授权日：2020-03-24
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