- 专利标题: MAGNETORESISTANCE EFFECT DEVICE
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申请号: US16235089申请日: 2018-12-28
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公开(公告)号: US20190228894A1公开(公告)日: 2019-07-25
- 发明人: Shinji HARA , Akimasa KAIZU
- 申请人: TDK CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: TDK CORPORATION
- 当前专利权人: TDK CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2018-007710 20180119
- 主分类号: H01F10/32
- IPC分类号: H01F10/32 ; H01F41/32 ; H03H11/04 ; H03H11/16 ; H03F15/00 ; H01L43/02 ; H01L43/10 ; H01L43/12
摘要:
The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.
公开/授权文献
- US10984938B2 Magnetoresistance effect device 公开/授权日:2021-04-20
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