- 专利标题: RADIO FREQUENCY SWITCHING CIRCUIT AND APPARATUS WITH REDUCED SWITCHING RESPONSE DELAY
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申请号: US16117794申请日: 2018-08-30
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公开(公告)号: US20190229718A1公开(公告)日: 2019-07-25
- 发明人: Byeong Hak JO , Hyun PAEK , Jeong Hoon KIM
- 申请人: Samsung Electro-Mechanics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2018-0008697 20180124
- 主分类号: H03K17/0412
- IPC分类号: H03K17/0412
摘要:
A radio frequency switching circuit includes a switching circuit comprising a plurality of switching transistors connected between a first terminal and a second terminal, a gate resistor circuit comprising a plurality of gate resistors, each of the plurality of gate resistors having a first node connected to a respective gate of each of the plurality of switching transistors, and a gate buffer circuit comprising a plurality of gate buffers, each of the plurality of gate buffers being connected to a respective second node of each of the plurality of gate resistors, wherein each of the plurality the gate buffers is configured to provide a first gate signal to the gate of each of the plurality of switching transistors through each of the plurality of gate resistors.
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