Invention Application
- Patent Title: Post-CMP Cleaning and Apparatus
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Application No.: US16390691Application Date: 2019-04-22
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Publication No.: US20190244804A1Publication Date: 2019-08-08
- Inventor: Fu-Ming Huang , Liang-Guang Chen , Ting-Kui Chang , Chun-Chieh Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67 ; B08B1/00 ; B08B1/04 ; H01L21/687 ; B08B3/04 ; H01L21/306

Abstract:
A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.
Public/Granted literature
- US11322345B2 Post-CMP cleaning and apparatus Public/Granted day:2022-05-03
Information query
IPC分类: