Invention Application
- Patent Title: Integrated Micro-Electromechanical Device of Semiconductor Material Having a Diaphragm
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Application No.: US16442199Application Date: 2019-06-14
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Publication No.: US20190292045A1Publication Date: 2019-09-26
- Inventor: Alberto Pagani , Alessandro Motta
- Applicant: STMicroelectronics S.r.l.
- Priority: ITTO2014A001068 20141218
- Main IPC: B81C1/00
- IPC: B81C1/00 ; G01L9/00 ; B81B3/00 ; B81B7/00

Abstract:
A method for making an integrated micro-electromechanical device includes forming a first body of semiconductor material having a first face and a second face opposite the first face. The first body includes a buried cavity forming a diaphragm delimited between the buried cavity and the first face. The diaphragm is monolithic with the first body. The method further includes forming at least one first magnetic via extending between the second face and the buried cavity of the first body, forming a first magnetic region extending over the first face of the first body, and forming a first coil extending over the second face of the first body and being magnetically coupled to the first magnetic via.
Public/Granted literature
- US11724932B2 Integrated micro-electromechanical device of semiconductor material having a diaphragm Public/Granted day:2023-08-15
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