- 专利标题： POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION IN HETEROEPITAXIAL FILMS
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申请号： US16516835申请日： 2019-07-19
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公开(公告)号： US20190341250A1公开(公告)日： 2019-11-07
- 发明人: Stephen W. Bedell , Cheng-Wei Cheng , Kunal Mukherjee , John A. Ott , Devendra K. Sadana , Brent A. Wacaser
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/306 ; H01L21/3065 ; H01L29/04
摘要：
A method for reducing crystalline defects in a semiconductor structure is presented. The method includes epitaxially growing a first crystalline material over a crystalline substrate, epitaxially growing a second crystalline material over the first crystalline material, and patterning and removing portions of the second crystalline material to form openings. The method further includes converting the first crystalline material into a non-crystalline material, depositing a thermally stable material in the openings, depositing a capping layer over the second crystalline material and the thermally stable material to form a substantially enclosed semiconductor structure, and annealing the substantially enclosed semiconductor structure.
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