- 专利标题： FABRICATION OF SCHOTTKY BARRIER DIODE USING LATERAL EPITAXIAL OVERGROWTH
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申请号： US16016415申请日： 2018-06-22
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公开(公告)号： US20190393092A1公开(公告)日： 2019-12-26
- 发明人: Sansaptak DASGUPTA , Marko RADOSAVLJEVIC , Han Wui THEN , Paul FISCHER , Walid HAFEZ
- 申请人： Sansaptak DASGUPTA , Marko RADOSAVLJEVIC , Han Wui THEN , Paul FISCHER , Walid HAFEZ
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/8252
- IPC分类号： H01L21/8252 ; H01L27/06 ; H01L27/02
摘要：
A diode is disclosed. The diode includes a semiconductor substrate, a hard mask formed above the substrate, vertically oriented components of a first material adjacent sides of the hard mask, and laterally oriented components of the first material on top of the hard mask. The laterally oriented components are oriented in a first direction and a second direction. The diode also includes a second material on top of the first material. The second material forms a Schottky barrier.
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