发明申请
- 专利标题： SEMICONDUCTOR MEMORY DEVICE
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申请号： US16129101申请日： 2018-09-12
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公开(公告)号： US20190393236A1公开(公告)日： 2019-12-26
- 发明人: Hajime Kaneko , Takuya Inatsuka , Hideki Inokuma
- 申请人： TOSHIBA MEMORY CORPORATION
- 申请人地址： JP Minato-ku
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2018-118054 20180621
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/11573 ; H01L27/1157
摘要：
A semiconductor memory device includes a first member spreading along a first direction and a second direction, a stacked body provided on a third-direction side when viewed from the first member, and a second member provided inside the first member and exposed at a surface of the first member on the third-direction side. A configuration of an end portion in the first direction of the stacked body is a staircase configuration having terraces formed every conductive film. The second member is made from a material different from a material of the first member. The second member is totally disposed in a region opposing a total length of an end edge of the stacked body on the first-direction side, and not disposed in an outer region of the stacked body on the second-direction side.
公开/授权文献
- US10535678B1 Semiconductor memory device 公开/授权日：2020-01-14
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