A light emitting diode includes an N-type semiconductor layer, a P-type semiconductor layer, and a light emitting layer. The P-type semiconductor layer is located on the N-type semiconductor layer. The light emitting layer is located between the N-type semiconductor layer and the P-type semiconductor layer. The N-type semiconductor layer has a first region and a second region connected to each other. The first region is overlapped with the light emitting layer and the P-type semiconductor layer in a first direction. The second region is not overlapped with the light emitting layer and the P-type semiconductor layer in the first direction. A sheet resistance of the P-type semiconductor layer is smaller than a sheet resistance of the N-type semiconductor layer.