Invention Application
- Patent Title: SCHOTTKY DIODE STRUCTURES AND INTEGRATION WITH III-V TRANSISTORS
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Application No.: US16024705Application Date: 2018-06-29
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Publication No.: US20200006322A1Publication Date: 2020-01-02
- Inventor: Han Wui THEN , Paul FISCHER , Walid HAFEZ , Marko RADOSAVLJEVIC , Sansaptak DASGUPTA
- Applicant: Intel Corporation
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/872 ; H01L21/8252 ; H01L27/02 ; H01L29/205 ; H01L29/20
Abstract:
Embodiments herein describe techniques, systems, and method for a semiconductor device. Embodiments herein may present a semiconductor device having a channel area including a channel III-V material, and a source area including a first portion and a second portion of the source area. The first portion of the source area includes a first III-V material, and the second portion of the source area includes a second III-V material. The channel III-V material, the first III-V material and the second III-V material may have a same lattice constant. Moreover, the first III-V material has a first bandgap, and the second III-V material has a second bandgap, the channel III-V material has a channel III-V material bandgap, where the channel material bandgap, the second bandgap, and the first bandgap form a monotonic sequence of bandgaps. Other embodiments may be described and/or claimed.
Public/Granted literature
- US11521964B2 Schottky diode structures and integration with III-V transistors Public/Granted day:2022-12-06
Information query
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