发明申请
- 专利标题: Plasma Source Having a Dielectric Plasma Chamber with Improved Plasma Resistance
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申请号: US16035551申请日: 2018-07-13
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公开(公告)号: US20200022246A1公开(公告)日: 2020-01-16
- 发明人: Xing Chen , Ilya Pokidov , Atul Gupta
- 申请人: MKS Instruments, Inc.
- 主分类号: H05H1/46
- IPC分类号: H05H1/46 ; H05H1/24 ; H01J37/32
摘要:
A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.
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