- 专利标题： ELBOW CONTACT FOR FIELD-EFFECT TRANSISTOR AND MANUFACTURE THEREOF
-
申请号： US16587980申请日： 2019-09-30
-
公开(公告)号： US20200027820A1公开(公告)日： 2020-01-23
- 发明人: Guy Cohen , Christian Lavoie , Ahmet Serkan Ozcan , Paul Solomon
- 申请人： International Business Machines Corporation
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/768 ; H01L21/02 ; H01L21/48
摘要：
A field-effect transistor (FET) and method of manufacture thereof include patterning a mask above a source and drain of a FET to form holes in the mask, growing epitaxial structures from the holes in the mask, and growing a doped epitaxial shell to coat sidewalls of the epitaxial structures.
公开/授权文献
信息查询
IPC分类:
