A device for switching Gallium Nitride (GaN) devices includes a high side driver, low side driver, and high side charge circuitry. The high side driver is adapted to control a high side GaN device using a high side supply. The low side driver is adapted to control a low side GaN device using a low side supply. The high side charge circuitry is adapted to charge the high side supply with the low side supply when the low side driver activates the low side GaN device.